Use of infrared camera for real-time temperature monitoring and control

ABSTRACT

Embodiments of the invention generally contemplate an apparatus and method for monitoring and controlling the temperature of a substrate during processing. One embodiment of the apparatus and method takes advantage of an infrared camera to obtain the temperature profile of multiple regions or the entire surface of the substrate and a system controller to calculate and coordinate in real time an optimized strategy for reducing any possible temperature non-uniformity found on the substrate during processing.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation application of co-pending U.S. patentapplication Ser. No. 12/263,349, filed on Oct. 31, 2008, which is hereinincorporated by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

Embodiments of the present invention generally relate to semiconductormanufacturing and specifically the use of infrared camera for real-timetemperature monitoring and control.

2. Description of the Related Art

Virtual Metrology (VM), an increasingly critical component ofsemiconductor manufacturing control, is a technology to predictmetrology variables using information about the state of the process forevery substrate. The idea of Virtual Metrology is to constructpredictive models that can forecast the electrical and physicalmetrology variables of substrates, based on data collected from therelevant processing tools, such as temperature, power, flow rate,pressure, optical emission spectrum, plasma impedance, etc. In this way,the time consuming and costly direct measurements of the metrologyvariables of the substrate can be minimized or eliminated altogether.Virtual Metrology in conjunction with Advanced Process Control (APC) canprovide real-time feed-forward control (i.e. to the next process step)and feed-backward control (i.e. to the previous process step) tocompensate for disturbance of an upstream process.

High temperature processing systems, such as a rapid thermal processing(RTP) reactor and a chemical vapor deposition (CVD) epitaxial reactor,require a substantially uniform temperature profile across thesubstrate. In some advanced processes, it is important to have asubstantially small temperature gradient from about 2 mm inside the edgeof the substrate. Particularly, it may be necessary to heat a substrateto a temperature between about 200° C. to about 1350° C. with atemperature deviation of only about 1° C. to 1.5° C. across thesubstrate. In such processes, the temperature uniformity may be improvedby controlling heat sources, such as a laser and an assembly of lampsthat are configured to heat the substrate on the front side while areflective surface on the back side reflects heat back to the substrate.Furthermore, point temperature measurement and compensation methodology,such as Virtual Metrology and Advanced Process Control, have been usedto improve the temperature gradient across the substrate. Examples

Individual temperature sensors, such as pyrometers, have been used totake point measurement of the substrate temperature as input data intothe Virtual Metrology and Advanced Process Control system. Conventionalprocessing systems typically use a small number of sensors due to spaceand cost constraints. To accurately measure the temperature profile ofthe entire substrate, a prohibitively large number of sensors would berequired.

Therefore, there is a need for apparatus and methods to accuratelymonitor and control in real time the temperature profile across theentire substrate in a processing system.

SUMMARY OF THE INVENTION

The present invention generally provides an apparatus for processing asubstrate, comprising a chamber body having a processing volume, asubstrate support that is disposed in the processing volume, a heatsource having a plurality of heating elements that are configured totransfer an amount energy to a region of a surface of the substrate thatis disposed on the substrate support, a temperature sensor assembly thatis configured to measure a temperature profile of the region of thesurface of the substrate, wherein the temperature sensor assemblycomprises an infrared camera, an actuator that is configured to rotatethe substrate support, a position sensor assembly that is coupled to thesubstrate support, and is configured to monitor the angular position orrotation speed of the substrate support, and a system controller that isin communication with the heat source, temperature sensor assembly,actuator, and position sensor assembly, and is configured to adjust theamount of energy delivered by at least one of the heating elements to aportion of the region of the surface of the substrate during processing.

The present invention also provides a method for processing a substrate,comprising placing a substrate on a substrate support, heating a firstregion of a surface of the substrate using a heat source, wherein theheat source comprises a plurality of heating elements that are groupedinto independently controllable zones, forming a first thermal image ofthe first region of the surface of the substrate using an infraredcamera, determining the location of a first area of temperaturenon-uniformity on the surface of the substrate using the first thermalimage, and adjusting the energy delivered by a first zone of heatingelements to reduce the temperature non-uniformity, wherein the firstzone of heating elements is positioned closer to the first area oftemperature non-uniformity than all other zones of heating elements.

The present invention also provides a method for processing a substrate,comprising placing a substrate on a substrate support, heating a surfaceof the substrate using a heat source, measuring a first temperatureprofile of a region of the surface of the substrate using a firstdevice, wherein the first device is an infrared camera, measuring asecond temperature profile of the region of the surface of the substrateusing a plurality of second devices, comparing an area of the secondtemperature profile with the corresponding area of the first temperatureprofile, and adjusting each of the plurality of second devices such thatthe second temperature profile matches the first temperature profile.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above-recited features of the presentinvention can be understood in detail, a more particular description ofthe invention, briefly summarized above, may be had by reference toembodiments, some of which are illustrated in the appended drawings. Itis to be noted, however, that the appended drawings illustrate onlytypical embodiments of this invention and are therefore not to beconsidered limiting of its scope, for the invention may admit to otherequally effective embodiments.

FIG. 1 shows a schematic cross sectional view of a processing systemaccording to one embodiment of the invention.

FIG. 2 illustrates a process sequence used by a system controller forreal-time temperature monitoring and control according to one embodimentof the invention.

FIGS. 3A and 3B show a schematic plan view of a substrate overlaid ontop of the zones of a lamp assembly and illustrate a lamp poweradjustment scheme according to one embodiment of the invention.

To facilitate understanding, identical reference numerals have beenused, where possible, to designate identical elements that are common tothe figures. It is contemplated that elements disclosed in oneembodiment may be beneficially utilized on other embodiments withoutspecific recitation.

DETAILED DESCRIPTION

Embodiments of the invention generally contemplate an apparatus andmethod for monitoring and controlling the temperature of a substrateduring processing. One embodiment of the apparatus and method takesadvantage of an infrared camera to obtain the temperature profile ofmultiple regions or the entire surface of the substrate and a systemcontroller to calculate and coordinate in real time an optimizedstrategy for reducing any possible temperature non-uniformity found onthe substrate during processing.

FIG. 1 schematically illustrates a cross sectional view of a processingsystem 100 having a process chamber 101, an upper reflector module 102,a lower lamp module (or a heat source) 103, and a system controller 160in one embodiment, wherein the processing chamber 101 is configured toform an epitaxial layer on a substrate positioned in a chamber volume123 contained within the processing chamber 101. While an expitaxialreactor is generally used to illustrate one or more embodiments of theinvention, this configuration is not intended to be limiting as to thescope of the invention described herein. Also, the configuration of thereactor and the arrangement of the reactor components, for example, thephysical shape, layout, and position of the process chamber, thereflector module, the lamp module, and the system controller, are notintended to be limiting as to the scope of the invention describedherein unless explicitly set forth in the claims.

As shown in FIG. 1, the process chamber 101 comprises a base plate 120having a circular opening where a lower dome 121 is positioned andsecured by a lower clamp ring 122. The lower dome 121 is dish shaped andhas an aperture 190 formed in a center. The lower dome 121 and a chamberlid 149 positioned above the base plate 120 define the chamber volume123 wherein a substrate support assembly 125, which is configured to berotated by an actuator, may be disposed for support of a substrate 156during process. In one embodiment, the base plate 120 and the lowerclamp ring 122 may be made of metal, such as aluminum, nickel platedaluminum, and stainless steel. The lower dome 121 may be made of quartzwhich resists most processing gases and has good thermal properties. Thebase plate 120 may have an inject port 124 formed on one side. Thechamber lid 149 may have a cover plate 136 positioned above the areawhere the substrate 156 is processed. The cover plate 136 may be made ofquartz. In one embodiment, the cover plate 136 made of quartz enablesuniform heating to the chamber volume 123 in combination with an upperheating assembly present. The inject port 124 is configured to adapt aninlet cap for processing gases. An exhaust port 126 is formed on anopposite side of the inject port 124. The exhaust port 126 may adapt toa vacuum source to maintain the pressure inside the process chamber 101.

As shown in FIG. 1, the upper reflector module 102 is attached to thechamber lid 149 and comprises a reflector plate 135 configured toreflect heat energy to the chamber volume 123. The reflector plate 135may be enclosed in a cover 138. The reflector plate 135 may have aplurality of through holes 140 formed therein. The plurality of throughholes 140 may enable cooling air to be circulated inside the upperreflector module 102 and/or provide paths for pyrometers or othersensors. The reflector plate 135 is configured to be cooled by liquidvia inlet 137. In one embodiment, the reflector plate 135 may be madefrom a gold plated metal. The upper reflector module 102 may furthercomprise an air inlet 139 disposed on the cover 138 and configured toprovide cooling air to the inside of the upper reflector module 102.

As shown in FIG. 1, the lower lamp module 103 is attached to the processchamber 101 and configured to heat the process chamber 101 through thelower dome 121. The lower lamp module 103 comprises a lamp assembly 133that consists of a plurality of vertically oriented lamps (or heatingelements) 132 disposed in a plurality of openings 192 defined by acooling plate 130 and a lower reflector assembly 131. The lower lampmodule 103 further comprises a bottom cover 128 which is removable fromside walls 127. The lamps 132 may be repaired and serviced from thebottom. A liquid inlet 142 and a liquid outlet 143 are formed in thecooling plate 130. The liquid cooled cooling plate 130 also reduces aircooling for the system, hence, reducing overall system size.

As shown in FIG. 1, the lower reflector assembly 131 is disposed abovethe cooling plate 130 and is configured to direct heat energy from thelamps 132 towards the lower dome 121. In one embodiment, an innerreflector 147 may be positioned near a center of the lower reflectorassembly 131 to surround the lower aperture 190 of the lower dome 121.The lower reflector assembly 131 comprises a base plate 148. A pluralityof apertures 144 corresponding to the plurality of apertures 141 on thecooling plate 130 are formed on the base plate 148. The plurality ofapertures 144 are configured to hold the plurality of lamps 132 therein.A plurality of vertical reflecting walls 146 extend upwards from thebase plate 148, and are concentric with one another and configured todirect the heat energy from the lamps 132 towards the lower dome 121. Inone embodiment, the lower reflector assembly 131 may be made from goldplated metal.

As shown in FIG. 1, an infrared (IR) camera 150, a part of a temperaturesensor assembly, is positioned in the upper reflector module 102 withthe lens facing the chamber volume 123. The IR camera is used to takedigital snapshots of the temperature profile across regions of or theentire surface 156A of the substrate 156, which is positioned in thechamber volume 123. A composite temperature profile can optionally becreated by combining the temperatures profiles of multiple regions ofthe substrate surface. A substrate-level temperature profile generallyprovides more detailed and higher resolution temperature data thandiscrete or point measurements made by individual sensors, such aspyrometers. The temperature data may be used to calibrate one or moretemperature sensors disposed in the process chamber 101, such as theones implemented in the reflector plate 135, and also may be used todetect substrate placement, breakage, and thermal environment within theinterior of the process chamber 201. Also, the temperature data mayimprove the accuracy of virtual metrology in close-loop control orstatistical process control to prevent drift in one or more processparameters. In one embodiment, the IR camera 150 may be positioned abovethe reflector plate 135 to protect it against excessive heat and lightflowing from the chamber volume 123. The IR Camera 150 may also bedisposed and secured within an opening 154 defined in the cover 138. Inone embodiment, a portion 152 or all of the reflector plate 135 is madeof silicon (Si) or germanium (Ge) to block segments of the spectrumoutside of the infrared range to minimize heat loss and improve thetemperature measurement accuracy.

The Infrared (IR) camera 150 may be selected so that it will detectradiation in the infrared range of the electromagnetic spectrum (roughlyabout 0.9 μm to about 14 μm) and produce thermal images of thatradiation. Since infrared radiation is emitted by all objects based ontheir temperatures, according to Kirchhoff's law of black bodyradiation, it is possible to see one's environment with or withoutvisible illumination. The amount of infrared radiation emitted by anobject increases with temperature, therefore the temperature of theobject can be indirectly obtained by detecting and measuring the levelof infrared radiation with an IR camera.

To allow the system controller 160 to independently control multiplezones 310 of the lamp assembly 133 (each zone bounded by dash lines 312as illustrated in FIG. 3), the IR camera 150 generally provides thermalimages with sufficient resolution, accuracy, and field of view todistinguish a temperature gradient between multiple areas on the surface156A, for example, corresponding to two zones of the lamp assembly 133that may be positioned above or below the substrate 156. In oneembodiment, the IR camera 150 is capable of measuring a temperaturerange of about 600° C. to about 1600° C. in a spectral range of about650 nm to about 1080 nm. In one embodiment, the IR camera 150 is coupledwith a wide angle lens to provide a field of view of greater than about33° in one direction by about 25° in the other direction to cover alarge portion of the substrate surface. In one embodiment, the IR camera150 is equipped to provide an image resolution of less than about 70 μmby about 70 μm and an image update rate of greater than about 60frames/sec. In one embodiment, the Pyrovision M9201 thermal imagingdigital camera available from Mikron Infrared, Inc., of Oakland, N.J.,may be used for this application. The specifications of the IR camera150 are not intended to be limiting as to the scope of the inventiondescribed herein.

As schematically illustrated in FIG. 1, the IR camera 150 is configuredto take and deliver thermal images of the substrate to the systemcontroller 160. The lamps 132 are connected to the system controller 160via a lamp module controller 162. The lamp module controller 162 isconfigured to individually adjust and control the power level of eachzone 310 of the lamp assembly 133 according to instructions from thesystem controller 160. In one aspect of the invention, a substratesupport controller 164, comprising a position sensor assembly, isconfigured to monitor and control a number of parameters related to thesubstrate support assembly 125, such as the angular position androtation speed of the assembly, and supply these parameters to thesystem controller 160. In one embodiment, the system controller 160receives the data, such as the thermal image, angular position, androtation speed of the substrate 156, calculates the appropriate powerlevel of each zone 310 of the lamp assembly 133 and the appropriaterotation speed of the substrate support assembly 125, and then adjuststhe power level and the rotation speed accordingly while the substrate156 is being processed.

As shown in FIG. 1, the system controller 160 may be generally used tocontrol one or more components found in the processing system 100, andtypically includes a central processing unit (CPU) (not shown), memory(not shown), and support circuits (or I/O) (not shown). The CPU may beone of any form of computer processors that are used in industrialsettings for controlling various system functions, substrate movement,chamber processes, and support hardware (e.g., sensors, robots, motors,lamps, etc.), and monitor the processes (e.g., substrate supporttemperature, power supply variables, chamber process time, I/O signals,etc.). The memory is connected to the CPU, and may be one or more of areadily available memory, such as random access memory (RAM), read onlymemory (ROM), floppy disk, hard disk, or any other form of digitalstorage, local or remote. Software instructions and data can be codedand stored within the memory for instructing the CPU. The supportcircuits are also connected to the CPU for supporting the processor in aconventional manner. The support circuits may include cache, powersupplies, clock circuits, input/output circuitry, subsystems, and thelike. A program (or computer instructions) readable by the systemcontroller 160 determines which tasks are performed on a substrate.Preferably, the program is software readable by the system controller160 that includes code to perform tasks.

FIG. 1 illustrates only one embodiment of all possible layouts of theprocessing system 100. Other possible layouts may include the reflectormodule 102 positioned below the substrate support assembly 125 and thelamp module 103 positioned above the substrate support assembly 125. Thetop side of the processing system 100 may be curved instead of flat.Also, the IR camera 150 may be positioned at any location where thecamera has a sufficient field of view of the substrate 156 and is ableto withstand the environmental factors, such as excessive heat andlight, typically found in epitaxial type chambers.

FIG. 2 illustrates a process sequence 200 used to calculate in real timethe appropriate power level of each zone 310 of the lamp assembly 133and the appropriate rotation speed of the substrate support assembly 125by use of the thermal image, angular position, and rotation speed datacollected by the system controller 160. The system controller 160 isthus used to reduce the temperature variation across the substrate 156,according to one embodiment of the invention.

After the substrate 156 is placed on the substrate support assembly 125,at step 202, the system controller 160 instructs the substrate supportcontroller 164 to initiate rotation.

At step 204, the system controller 160 instructs the lamp modulecontroller 162 to turn on the lamps to an initial power level.

At step 206, the system controller 160 monitors the thermal images ofthe substrate 156 generated by the IR camera 150 and converts thethermal images to temperature uniformity type data.

At step 208, based on the temperature uniformity type data, the systemcontroller 160 determines which areas on the substrate 156, if any, havea temperature variation larger than a pre-determined threshold amount.If none are found, then the system controller 160 moves back to step206. If at least one non-uniform area is found, then the systemcontroller 160 moves to step 210.

At step 210, the system controller 160 locates the one or more zones ofthe lamp assembly 133 through which the non-uniform area is currentlypassing by use of the angular position and rotation speed of thesubstrate 156 provided by the substrate support controller 164. Then,the system controller 160 calculates the appropriate power level for theone or more identified zones to reduce the temperature non-uniformity,and instructs the lamp module controller 162 to adjust the power levelof those zones. In conjunction with adjusting the power level, thesystem controller 160 calculates the appropriate rotation speed of thesubstrate support assembly 125 to reduce the temperature non-uniformity,and instructs the substrate support controller 164 to adjust therotation speed of the substrate support assembly 125. In general, it isdesired for the calculation and the transit of the control instructionssent by the system controller 160 to take a very short time compared tothe rotation speed of the substrate 156 (e.g. up to about 30 rpm) andtherefore can be ignored.

To further illustrate step 210, FIGS. 3A and 3B illustrate a plan viewof the substrate 156 overlaid on top of the projected area of the zones310 of the lamp assembly 133. In the embodiment, as shown in FIGS. 3Aand 3B, the substrate 156 is circular and has a non-uniform area 360having a temperature different from a desired value. The lamp assembly133 is arranged into zones 310 that are radial and concentric to oneanother. In this example, each zone is bounded by the dash lines 312. Inone embodiment, all lamps in the same zone receive the same instructionsfrom the lamp module controller 162 and act as one unit, having the samepower level, turn-on time, turn-off time, etc.

Referring to both of FIGS. 2 and 3A, at step 206 while the IR camera 150takes a thermal image of the substrate 156 rotating in direction C, alow-temperature area 360, in this example, is passing over zones 320 and330 of the lamp assembly 133. At steps 208 and 210, the systemcontroller 160 determines the presence of the low-temperature area 360relative to the other areas of the substrate. At step 210, the systemcontroller 160 calculates the appropriate lamp power level to reduce thetemperature non-uniformity and, based on the current angular positionand rotation speed of the substrate 156, instructs the lamp modulecontroller 162 to adjust the power level of the lamps in zones 320 and330. The appropriate power level is generally based on a number ofparameters, including the degree of deviation from the desired value. Inthis low-temperature example, the larger the deviation is, the morepower (or intensity) the lamps in zones 320 and 330 will need to have tobring the temperature of the low-temperature area 360 back to anacceptable level.

In conjunction with adjusting the power level of the lamps, at step 210,the system controller 160 calculates the appropriate rotation speed ofthe substrate support assembly 215 to reduce the temperaturenon-uniformity. In this low-temperature example, the system controller160 may decrease the rotation speed to allow a longer duration ofheating over the lamps in zones 320 and 330.

Referring to both of FIGS. 2 and 3B, the system controller 160 cyclesback to step 206 and instructs the IR camera 150 to take another thermalimage of the substrate 156 while the low-temperature area 360 has movedto the space above zones 340 and 350 of the lamp assembly 133, in thisexample. At the following steps 208 and 210, the system controller 160determines the presence of the low-temperature area 360 that is stillshowing a larger-than-acceptable deviation from the desired temperaturevalue. At step 210, the system controller 160 calculates the appropriatelamp power level and substrate rotation speed to reduce the temperaturenon-uniformity. Based on the current angular position and rotation speedof the substrate 156, the system controller 160 instructs the lampmodule controller 162 to adjust the power level of the lamps in zones340 and 350 and the substrate support controller 164 to adjust therotation speed of the substrate support assembly 125. And the adjustmentprocess repeats itself until the degree of deviation in thelow-temperature area 360 is minimized to within an acceptable level.

Embodiments of this invention may generally provide a processing chamberhaving an IR camera to facilitate an improved method of real-timemonitoring and control of the temperature of a substrate in a processingsystem. Images taken by the IR camera are able to provide temperatureprofiles across various regions and/or the entire surface of thesubstrate, which generally provide more detailed and higher resolutiontemperature data than discrete or point measurements made by individualsensors, such as pyrometers. The high resolution temperature data thenenable a system controller to perform real-time monitoring and controlof the temperature via a feed-backward or feed-forward loop to minimizetemperature non-uniformity across the substrate.

While the foregoing is directed to embodiments of the invention, otherand further embodiments of the invention may be devised withoutdeparting from the basic scope thereof, and the scope thereof isdetermined by the claims that follow.

1. An apparatus for processing a substrate, comprising: a chamber bodyhaving a processing volume; a substrate support that is disposed in theprocessing volume; a plurality of heat lamps configured to transferenergy to at least a region of a surface of a substrate that is disposedon the substrate support; a lamp module controller configured to adjustand control a power level of one or more of the lamps; a temperaturesensor assembly that is configured to measure a temperature profile ofthe region of the surface of the substrate, wherein the temperaturesensor assembly comprises an infrared camera that is positioned facing afront side of the substrate support; a substrate support controllerhaving a position sensor assembly, wherein the substrate supportcontroller is coupled to the substrate support and is configured tomonitor and to control an angular position and a rotation speed of thesubstrate support; and a system controller that is in communication withthe lamp module controller, the substrate support controller and thetemperature sensor assembly-wherein the system controller is configuredto receive data from at least the substrate support controller and thetemperature sensor assembly, to calculate appropriate power levels forthe lamps and an appropriate rotation speed of the substrate support, toprovide instructions to the lamp module controller to adjust the powerlevels of the lamps, and to provide instructions to the substratesupport controller to adjust the angular position and the rotation speedof the substrate support.
 2. The apparatus of claim 1, wherein theplurality of lamps are grouped into independently controllable zones. 3.The apparatus of claim 1, further comprising a reflector module,positioned to reflect energy towards the front side of the substratesupport, and having a reflector plate enclosed in a cover defining aspace between the reflector plate and the cover.
 4. The apparatus ofclaim 3 further comprising a coolant inlet for the reflector module,wherein at least a portion of the infrared camera is disposed in anopening in the cover.
 5. The apparatus of claim 4, wherein the infraredcamera is configured to detect placement and/or breakage of thesubstrate.
 6. The apparatus of claim 5, wherein the region of thesurface of the substrate is the entire processing surface of thesubstrate.
 7. The apparatus of claim 3, wherein the reflector platecomprises silicon or germanium.
 8. A method for processing a substrate,comprising: placing a substrate on a substrate support; heating a firstregion of a surface of the substrate using a heat source positionedfacing a back side of the substrate support and configured to transferenergy to the first region of the surface of the substrate, wherein theheat source comprises a plurality of lamps that are grouped intoindependently controllable zones; forming a first thermal image of thefirst region of the surface of the substrate using an infrared cameraand sending the first thermal image to a system controller, wherein theinfrared camera is positioned facing a front side of the substratesupport; using the system controller to determine a location of a firstarea of temperature non-uniformity on the surface of the substrate usingthe first thermal image and to calculate appropriate power levels forthe lamps and an appropriate rotation speed of the substrate support;providing instructions from the system controller to a lamp modulecontroller to adjust the energy delivered by a first zone of heatingelements to reduce the temperature non-uniformity, wherein the firstzone of lamps is positioned closer to the first area of temperaturenon-uniformity than all other zones of heating elements; and providinginstructions from the system controller to a substrate supportcontroller to adjust the rotation speed of the substrate support to theappropriate rotation speed of the substrate support.
 9. The method ofclaim 8, further comprising forming a second thermal image of the firstregion of the surface of the substrate using an infrared camera.
 10. Themethod of claim 8, further comprising: rotating the substrate; andmeasuring the angular position or rotation speed of the substrate,wherein the determining the location of a first area of temperaturenon-uniformity is based on the first thermal image and the measuredangular position or rotation speed of the substrate.
 11. The method ofclaim 8, further comprising: comparing the first thermal image against adesired target temperature profile.
 12. The method of claim 8, furthercomprising: forming a third thermal image of a second region of thesurface of the substrate using the infrared camera; determining thelocation of a second area of temperature non-uniformity on the surfaceof the substrate using the second thermal image; and adjusting theenergy delivered by a second zone of heating elements to reduce thetemperature non-uniformity, wherein the second zone of heating elementsis positioned closer to the second area of temperature non-uniformitythan all other zones of heating elements.
 13. The method of claim 12,wherein the determining the location of a second area of temperaturenon-uniformity is based on the second thermal image and the measuredangular position or rotation speed of the substrate.
 14. An apparatusfor processing a substrate, comprising: a chamber body having aprocessing volume; a substrate support that is disposed in theprocessing volume; a plurality of heat lamps positioned facing a backside of the substrate support and configured to transfer energy to atleast a region of a surface of a substrate that is disposed on thesubstrate support; a lamp module controller configured to adjust andcontrol a power level of one or more of the lamps; a temperature sensorassembly that is configured to measure a temperature profile of theregion of the surface of the substrate, wherein the temperature sensorassembly comprises an infrared camera that is positioned facing a frontside of the substrate support; a substrate support controller having aposition sensor assembly, wherein the substrate support controller iscoupled to the substrate support and is configured to monitor and tocontrol an angular position and a rotation speed of the substratesupport; and a system controller that is in communication with the lampmodule controller, the substrate support controller and the temperaturesensor assembly, wherein the system controller is configured to receivedata from at least the substrate support controller and the temperaturesensor assembly, to calculate appropriate power levels for the lamps andan appropriate rotation speed of the substrate support, to provideinstructions to the lamp module controller to adjust the power levels ofthe lamps, and to provide instructions to the substrate supportcontroller to adjust the angular position or the rotation speed of thesubstrate support.
 15. The apparatus of claim 14, further comprising areflector module, positioned to reflect energy towards the front side ofthe substrate support, and having a reflector plate enclosed in a coverdefining a space between the reflector plate and the cover.
 16. Theapparatus of claim 15, further comprising a coolant inlet for thereflector module, wherein at least a portion of the infrared camera isdisposed in an opening in the cover.
 17. The apparatus of claim 16,wherein the infrared camera is configured to detect placement and/orbreakage of the substrate.
 18. The apparatus of claim 17, wherein theregion of the surface of the substrate is the entire processing surfaceof the substrate.
 19. The apparatus of claim 18, wherein the pluralityof lamps are grouped into independently controllable zones.
 20. Theapparatus of claim 19, wherein the reflector plate comprises silicon orgermanium.